1 aos semiconductor product reliability report AOW2500 , rev a plastic encapsulated device alpha & omega semiconductor, inc www.aosmd.com
2 this aos product reliability report summarizes the qualification result for AOW2500 . accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. review of final electrical test result confirms that AOW2500 passes aos quality and reliability requirements. the relea sed product will be categorized by the process family and be routine monitored for continuously improving the product quality. table of contents: i. product description ii. package and die information iii. reliability stress test summary and result s iv. reliability eval uation i. product description: the AOW2500 uses trench mosfet technology that is 150v uniquely optimized to provide the most efficient high frequency switching performance. both conduction and switching power losses are minimized due to an extremely low combination of r ds(on) , ciss and coss. this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backlighting. details refer to the datasheet. ii. die / package information: AOW2500 process standard sub - micron 150 v n - channel mos fet package type to2 62 lead frame bare cu die attach soft solde r bond ing al wire mold material epoxy resin with silica filler moisture level up to level 1
3 iii. reliability stress test summary and result s * note : the reliability data presents total of available generic data up to the published date. iv. relia bility evaluation fit rate (per billion): 3.27 mttf = 34906 years the presentation of fit rate for the individual product reliability is restricted by the actual burn - in sample size. failure rate determination is based on jedec standard jesd 85. fit me ans one failure per billion hours. failure rate = chi 2 x 10 9 / [ 2 (n) (h) (af) ] = 3.27 mt t f = 10 9 / fit = 34906 years chi2 = chi squared distribution, determined by the number of failures and confidence interval n = total number of units from burn - in tes ts h = duration of burn - in testing af = acceleration factor from test to use conditions (ea = 0.7ev and tuse = 55 c ) acceleration factor [ af ] = exp [ea / k (1/tj u C 1/tj s )] acceleration factor ratio list: 55 deg c 70 deg c 85 deg c 100 deg c 115 deg c 1 30 deg c 150 deg c af 25 9 87 32 13 5.64 2.59 1 tj s = stressed junction temperature in degree (kelvin), k = c+273.16 tj u =the use junction temperature in degree (kelvin), k = c+273.16 k = boltz m anns constant, 8.6 17164 x 10 - 5 e v / k test item test condition time point total sample size * number of failures reference standard msl precondition 168hr 85 c/85%rh + 3 cycle reflow@260 c (msl 1) - 2772 pcs 0 jesd22 - a113 htgb temp = 150 c , vgs=100% of vgsmax 168 / 500 / 1000 hrs 6 16 pcs 0 jesd22 - a108 htrb temp = 150 c , vds=80% of vdsmax 168 / 500 / 1000 hrs 6 16 pcs 0 jesd22 - a108 hast 130 c , 85% rh , 33.3 psi, v d s = 8 0% of v d s max before a rc ing (typically 42v) 96 hrs 924 pcs 0 jesd22 - a110 pressur e pot 121 c , 29.7psi , rh=100% 96 hrs 924 pcs 0 jesd22 - a102 temperature cycle - 65 c to 150 c , air to air, 250 / 500 cycles 924 pcs 0 jesd22 - a104
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